User manual YANMAR 3GMD

[. . . ] (2) Short-time operation during mismatch. Fig. 2 DC SOAR. Fig. 3 Power derating curves. 2003 Sep 19 3 Philips Semiconductors Product Specification VHF push-pull power MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per transistor section V(BR)DSS IDSS IGSS VGSth VGS gfs gfs1/gfs2 RDSon IDSX Cis Cos Crs Cd-f drain-source breakdown voltage VGS = 0; ID = 100 mA drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both sections forward transconductance forward transconductance ratio of both sections drain cut-off current input capacitance output capacitance feedback capacitance drain-flange capacitance VGS = 0; VDS = 50 V VGS = ±20 V; VDS = 0 VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 5 A VDS = 10 V; ID = 5 A 125 - - 2 - 4. 5 0. 9 - - - - - - - - - - - 6. 2 - 0. 2 25 480 190 14 5. 4 - PARAMETER CONDITIONS MIN. TYP. 3GMD MAX. UNIT V mA µA V mV S 2. 5 1 4. 5 100 - 1. 1 0. 3 - - - - - drain-source on-state resistance VGS = 10 V; ID = 5 A VGS = 10 V; VDS = 10 V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz A pF pF pF pF VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2. 0 2. 1 2. 2 2. 3 2. 4 2. 5 2. 6 2. 7 2. 8 2. 9 3. 0 3. 1 3. 2 MAX. [. . . ] (mV/K) -1 ID (A) 20 -2 -3 10 -4 -5 10-2 10-1 0 1 ID (A) 10 0 5 10 VGS (V) 15 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig. 4 Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig. 5 Drain current as a function of gate-source voltage; typical values per section. handbook, halfpage 400 MGE621 handbook, halfpage 1200 MGE615 RDSon (m) 300 C (pF) 800 200 Cis 400 100 Cos 0 0 50 100 Tj (°C) VGS = 10 V; ID = 5 A. 150 0 0 20 40 VDS (V) 60 VGS = 0; f = 1 MHz. Fig. 6 Drain-source on-state resistance as a function of junction temperature; typical values per section. Fig. 7 Input and output capacitance as functions of drain-source voltage; typical values per section. 2003 Sep 19 5 Philips Semiconductors Product Specification VHF push-pull power MOS transistor 3GMD handbook, halfpage 400 MGE620 Crs (pF) 300 200 100 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig. 8 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION Class-B operation RF performance in CW operation in a common source push-pull test circuit. RGS = 4 per section; optimum load impedance per section = 3. 2 + j4. 3 (VDS = 50 V). MODE OF OPERATION CW, class-B CW, class-C Ruggedness in class-B operation The 3GMD is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the following conditions: VDS = 50 V; f = 108 MHz at rated load power. f (MHz) 108 108 VDS (V) 50 50 IDQ (A) 2 × 0. 1 VGS = 0 PL (W) 300 300 Gp (dB) >20 typ. 80 2003 Sep 19 6 Philips Semiconductors Product Specification VHF push-pull power MOS transistor 3GMD handbook, halfpage 30 MGE682 MGE683 handbook, halfpage 80 Gp (dB) 20 D (%) (1) 60 (2) (1) 40 (2) (2) (1) 10 20 0 0 200 400 PL (W) 600 0 0 200 400 PL (W) 600 Class-B operation; VDS = 50 V; IDQ = 2 × 0. 1 A; f = 108 MHz; ZL = 3. 2 + j4. 3 (per section); RGS = 4 (per section). (2) Th = 70 °C. Class-B operation; VDS = 50 V; IDQ = 2 × 0. 1 A; f = 108 MHz; ZL = 3. 2 + j4. 3 (per section); RGS = 4 (per section). (2) Th = 70 °C. Fig. 9 Power gain as a function of load power; typical values. Fig. 10 Efficiency as a function of load power; typical values. handbook, halfpage 600 MGE684 PL (W) (1) 400 (2) 200 0 0 5 10 Pi (W) 15 Class-B operation; VDS = 50 V; IDQ = 2 × 0. 1 A; f = 108 MHz; ZL = 3. 2 + j4. 3 (per section); RGS = 4 (per section). (2) Th = 70 °C. Fig. 11 Load power as a function of input power; typical values. 2003 Sep 19 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. 2003 Sep 19 8 C2 +VDD1 R11 IC1 R7 C36 C37 C11 C19 C25 C24 Philips Semiconductors VHF push-pull power MOS transistor handbook, full pagewidth +VDD1 C20 C16 C21 R2 C8 C12 A R8 L11 R3 C13 C9 C17 C22 50 input T1 C3 C1 R1 C4 , , , , , , , , , , , , , , , , R4 D. U. T. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www. semiconductors. philips. com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. [. . . ] Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. [. . . ]